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Silicon Carbide (SiC): The Future of Power? عرض

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Silicon carbide, also known as SiC, is a semiconductor base material that consists of pure silicon and pure carbon. You can dope SiC with nitrogen or phosphorus to form an n-type semiconductor or dope it with beryllium, boron, aluminum, or gallium to form a p-type semiconductor. While many varieties and purities of silicon carbide exist, semiconductor-grade quality silicon carbide has only surfaced for utilization in the last few decades.

- Lely method: During this process, a granite crucible heats to a very high temperature, usually by way of induction, to sublimate silicon carbide powder. A graphite product rod with lower temperature suspends in the gaseous mixture, which inherently allows the pure silicon carbide to deposit and form crystals.

In the solar industry, SiC-enabled inverter optimization also plays a large role in efficiency and cost savings. Utilizing silicon carbide in solar inverters increases the system's switching frequency by two to three times that of standard silicon. This switching frequency increase allows for a reduction in the circuit's magnetics, resulting in considerable space and cost savings. As a result, silicon carbide-based inverter designs can be nearly half the size and weight than that of a silicon-based inverter. Another factor that encourages solar manufacturers and engineers to use SiC over other materials, such as gallium nitride, is its robust durability and reliability. Silicon carbide's reliability enables solar systems to achieve the stable longevity they need to operate continuously for over a decade.

Saving the World with Silicon Carbide

Several key leaders in the silicon carbide space are providing bountiful resources and products centered around SiC. Cree Wolfspeed offers a variety of silicon carbide products, such as:


 
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